This paper has a simple introduction on the metal bonds and the composites of metal and superhard materials ( diamond and cubic boron nitride). 主要时常用的金属结合剂和金属复合超硬材料(金刚石、立方氮化硼)材料做了简单的介绍和描述。
In one embodiment, the metal nitride layer pattern is1/ 4 to1/ 2 as thick as the silicide. 在一个实施例中,该金属氮化层图案的厚度是该硅化物的1/4至1/2。
Cohesive Energies of the Transition Metal Nitride Calculated by First-Principles Method 过渡金属氮化物的结合能第一原理计算
Studies of Hard Metal Nitride Films on Aluminum Alloy 铝合金上沉积金属氮化物硬质膜的研究
A radiation hardened N channel Si power device& VDMNOSFET ( Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer ( Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P+ region. 采用Si3N4-SiO2双层栅介质及自对准重掺杂浅结P+区研制出了一种抗辐射加固功率器件&VDMNOS-FET(垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。
Main studies in the field of thermodynamics of denitrogenation by flux are related to the chemical reactions of nitrogen in slag and metal and the nitride capacity of slag. 熔渣脱氮热力学研究主要涉及脱氮反应和熔渣的氮容量。
An improvement on the properties of cold punch by Cr-based metal nitride hard coating Cr基金属氮化物涂层改善冷冲模性能的研究
Formation and Properties of ⅳ B Transition Metal Nitride and Nanocomposite Materials ⅣB族金属氮化物及其纳米复合材料的合成与性能
An apparatus consisting of a planar metal disc flyer driven by explosives and a cylindrical chamber was designed to synthesize cubic silicon nitride using the mixtures of impure α– Si3N4 and copper powders as starting materials. 设计和采用有炸药驱动平面飞片加载器和圆桶形样品回收室的装置,用非高纯的α–Si3N4粉体和铜粉作原料合成了c–Si3N4。
A study on transition metal nitride thin films as diffusion barriers 过渡金属氮化物防扩散阻挡薄膜研究
The metal-nitride bonded slide plate was developed by means of the powder metallurgical technique and nitriding sintering process, using corundum as aggregate and metal aluminum as main matrix. 以刚玉为骨料,金属铝为主要基质,利用粉末冶金工艺,氮化烧成,制成了具有金属陶瓷性能的金属-氮化物结合滑板。
Study of Refractory Metal Nitride Gate s 难熔金属氮化物栅的技术研究
The catalysts on studying can divide into two kinds: the transition metal bifunctional catalysts and the nitride, carbide and oxycarbide catalysts of transition metals. 目前,正丁烷脱氢异构催化剂可以分为两类,过渡金属双功能催化剂和过渡金属氮化物、碳化物和碳氧化物催化剂。
Schottky barrier diodes with different metal on III nitride have been fabricated. 研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
The Schottky barrier and ohmic contacts at metal/ ⅲ-nitride interfaces are the key technology to develop the blue and ultraviolet optical devices and high temperature, high power electronic devices. 金属/氮化物肖特基势垒和欧姆接触是蓝紫光光学器件及高温大功率电子器件中的关键工艺。
For anode film, the main attention is paid to the substitutes of lithium metal, such as nitride, oxide of tin metal and amorphous silicon thin-film, in order to gain better cyclic capability. 阳极膜方面以对锂金属替代物的研究为主,比如锡的氮化物、氧化物以及非晶硅膜,研究多集中在循环效能的提高。
Because of its anti-wearing, high mechanical strength, good insulation, and strong ability to resisitance to alkali metal ions and water erosion, silicon nitride thin films are used as passivation layers, dielectric layers and support layers in MEMS. 氮化硅薄膜由于具有耐磨性好、机械强度高、绝缘性好并能够抗碱金属离子、水汽的侵蚀而被广泛用于半导体器件的钝化层、介质层及微结构器件的结构支撑层。